Embedded storage elements on next MCU generation ready for AI on the edge
The main objective of the storAIge project is the development and industrialization of FDSOI 28nm and next generation embedded Phase Change Memory (ePCM) world-class semiconductor technologies, allowing the prototyping of high performance, Ultra low power and secured & safety System on Chip (SoC) solutions enabling competitive Artificial Intelligence (AI) for Edge applications.
The main challenge addressed by the project is on one hand to handle the complexity of sub-28nm 'more than moore' technologies and to bring them up at a high maturity level and on the other hand to handle the design of complex SoCs for more intelligent, secure, flexible, low power consumption and cost effective. The project is targeting chipset and solutions with very efficient memories and high computing power targeting 10 Tops per Watt.
The development of the most advanced automotive microcontrollers in FDSOI 28nm ePCM will be the support technology to demonstrate the high performances path as well as the robustness of the ePCM solution. The next generation of FDSOI ePCM will be main path for general purpose advanced microcontrollers usable for large volume Edge AI application in industrial and consumer markets with the best compromise on three requirements: performances, low power and adequate security.
Please, do not hesitate to contact Jiri Kadlec for more information.
- Raissa Likhonina: Doctoral Thesis (1447990228 B)
|Title:||Embedded storage elements on next MCU generation ready for AI on the edge|
|Project No.:||ECSEL 101007321
|Duration:||1 July 2021 - 30 June 2024|